Invention Grant
US09455206B2 Overlay measuring method and system, and method of manufacturing semiconductor device using the same 有权
覆盖测量方法和系统,以及使用其制造半导体器件的方法

Overlay measuring method and system, and method of manufacturing semiconductor device using the same
Abstract:
An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.
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