摘要:
Example embodiments relate to an apparatus and method for inspecting a substrate defect. The substrate defect inspecting apparatus includes a substrate, a light source emitting an infrared beam to the substrate, a detector detecting the infrared beam reflected from the substrate, and a defect analyzer receiving first information and second information from the detector and analyzing defects existing in the substrate. According to at least one example embodiment, the second information is acquired during a later process than the first information.
摘要:
An overlay measuring method includes irradiating an electron beam onto a sample, including a multi-layered structure of overlapped upper and lower patterns formed thereon, to obtain an actual image of the upper and lower patterns. A first image representing the upper pattern and a second image representing the lower pattern are obtained from the actual image. A reference position for the upper and lower patterns is determined from a design image of the upper and lower patterns. A position deviation of the upper pattern with respect to the reference position in the first image and a position deviation of the lower pattern with respect to the reference position in the second image are calculated to determine an overlay between the upper pattern and the lower pattern.
摘要:
Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.
摘要:
Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen. Related methods are also disclosed.
摘要:
A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.
摘要:
A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.
摘要:
In a method of generating a three-dimensional process window qualification, a photoresist layer is coated on a substrate including an underlying structure. A plurality of circular-shaped regions of the substrate are distinguished into 1 to n regions to partition the substrate into a center portion and an edge portion, n being a natural number greater than 2. 1 to n exposing ranges are set, including a common exposing condition for the 1 to n regions. A photoresist pattern is fox led by exposing each shot portion in the 1 to n regions using a split exposing condition in the 1 to n exposing ranges. The photoresist pattern is detected, and a normal photoresist pattern with respect to each of the 1 to n regions is selected to generate the three-dimensional process window qualification.
摘要:
A defect inspection apparatus comprises a table on which a substrate is placed, a first detection unit which is disposed above the table to detect an optical signal from the substrate, a second detection unit which is disposed above the table to detect an electrical signal from the substrate, and a signal processing unit which is connected to the first detection unit and the second detection unit to detect a chemical defect using the optical signal and the electrical signal.
摘要:
In a method of generating a three-dimensional process window qualification, a photoresist layer is coated on a substrate including an underlying structure. A plurality of circular-shaped regions of the substrate are distinguished into 1 to n regions to partition the substrate into a center portion and an edge portion, n being a natural number greater than 2. 1 to n exposing ranges are set, including a common exposing condition for the 1 to n regions. A photoresist pattern is fox led by exposing each shot portion in the 1 to n regions using a split exposing condition in the 1 to n exposing ranges. The photoresist pattern is detected, and a normal photoresist pattern with respect to each of the 1 to n regions is selected to generate the three-dimensional process window qualification.
摘要:
A method for classifying defects of an object includes irradiating lights having different polarizations onto the object to create an inspection spot on the object, collecting scattered lights generated by the irradiated lights scattering from the inspection spot, and classifying defects of the object by type of defect by analyzing the scattered lights. An apparatus for classifying defects of an object includes light creating means emitting lights having different polarizations to create an inspection spot on the object, and a detecting member for collecting scattered lights that are created from the lights scattering from the inspection spot, wherein the scattered lights are analyzed and classified in accordance with defects positioned on the inspection spot of the object.