Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate.According to the present invention, reliability can be improved by increasing bonding areas and bonding strength of semiconductor devices as well as processibilty can be enhanced and failure is reduced by adjusting a step difference with respect to an arrangement and height of the semiconductor devices. Further, a processing time resulting from an omission of a wire bonding process is reduced.