Invention Grant
US09455226B2 Semiconductor device allowing metal layer routing formed directly under metal pad
有权
半导体器件允许直接在金属焊盘下方形成金属层布线
- Patent Title: Semiconductor device allowing metal layer routing formed directly under metal pad
- Patent Title (中): 半导体器件允许直接在金属焊盘下方形成金属层布线
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Application No.: US14165594Application Date: 2014-01-28
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Publication No.: US09455226B2Publication Date: 2016-09-27
- Inventor: Chun-Liang Chen , Tien-Chang Chang , Chien-Chih Lin
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/528 ; H01L23/00
Abstract:
The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed on a second metal layer of the semiconductor device, and directly under the metal pad.
Public/Granted literature
- US20140217601A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-08-07
Information query
IPC分类:
