公开(公告)号：US20160372431A1

公开(公告)日：2016-12-22

申请号：US15250888

申请日：2016-08-29

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/00

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing and a second specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing and the second specific metal layer routing are formed in a second metal layer of the semiconductor device, wherein the first specific metal layer routing is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad.

Abstract translation: 本发明提供一种半导体器件。 半导体器件包括：金属焊盘和第一特定金属层布线和第二特定金属层布线。 金属焊盘位于半导体器件的第一金属层上。 第一特定金属层布线和第二特定金属层布线形成在半导体器件的第二金属层中，其中第一特定金属层布线直接在金属焊盘下方，并且第二特定金属层布线不直接位于 金属垫。

公开(公告)号：US20170162505A1

公开(公告)日：2017-06-08

申请号：US15432906

申请日：2017-02-14

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/528 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.

公开(公告)号：US09627336B2

公开(公告)日：2017-04-18

申请号：US15250888

申请日：2016-08-29

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/52 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/088

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing and a second specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing and the second specific metal layer routing are formed in a second metal layer of the semiconductor device, wherein the first specific metal layer routing is directly under the metal pad and the second specific metal layer routing is not directly positioned under the metal pad.

公开(公告)号：US09455226B2

公开(公告)日：2016-09-27

申请号：US14165594

申请日：2014-01-28

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/00

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed on a second metal layer of the semiconductor device, and directly under the metal pad.

Abstract translation: 本发明提供一种半导体器件。 半导体器件包括：金属焊盘和第一特定金属层布线。 金属焊盘位于半导体器件的第一金属层上。 第一特定金属层布线形成在半导体器件的第二金属层上，并且直接在金属焊盘下方。

公开(公告)号：US09847294B2

公开(公告)日：2017-12-19

申请号：US15432906

申请日：2017-02-14

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/00 ,  H01L23/522 ,  H01L27/088

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.

公开(公告)号：US20140217601A1

公开(公告)日：2014-08-07

申请号：US14165594

申请日：2014-01-28

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/48

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed on a second metal layer of the semiconductor device, and directly under the metal pad.

Abstract translation: 本发明提供一种半导体器件。 半导体器件包括：金属焊盘和第一特定金属层布线。 金属焊盘位于半导体器件的第一金属层上。 第一特定金属层布线形成在半导体器件的第二金属层上，并且直接在金属焊盘下方。