发明授权
- 专利标题： Semiconductor optoelectronic device
- 专利标题（中）： 半导体光电器件
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申请号： US13226095申请日： 2011-09-06
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公开(公告)号： US09455242B2公开(公告)日： 2016-09-27
- 发明人: Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
- 申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 优先权： TW100112126A 20110406
- 主分类号： H01L31/042
- IPC分类号： H01L31/042 ; H01L33/00 ; H01L25/075 ; H01L31/18 ; H01L23/00 ; H01L33/44 ; H01L33/62
摘要：
A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
公开/授权文献
- US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 公开/授权日：2012-03-08