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    Photoelectronic element and the manufacturing method thereof
    1.
    发明授权
    Photoelectronic element and the manufacturing method thereof 有权
    光电元件及其制造方法

    公开(公告)号：US09337407B2

    公开(公告)日：2016-05-10

    申请号：US12751642

    申请日：2010-03-31

    申请人： Chiu-Lin Yao

    发明人： Chiu-Lin Yao

    IPC分类号： H01L33/00 ,  H01L33/64 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46

    CPC分类号： H01L33/641 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A photoelectronic element includes an electrically insulative substrate, an electrically conductive substrate, an intermediate layer and a semiconductor stacked layer. The electrically insulative substrate has a top surface. The electrically conductive substrate has a lower portion, and an upper portion surrounded by the electrically insulative substrate and coplanar with the top surface. The intermediate layer has a first portion formed directly under the electrically insulative substrate and above the electrically conductive substrate, a second portion and a bent portion formed between the first portion and the second portion. The semiconductor stacked layer has an light-emitting active layer with a high band gap, disposed on the electrically insulative substrate and the upper portion.

    摘要翻译： 光电子元件包括电绝缘基板，导电基板，中间层和半导体堆叠层。 电绝缘基板具有顶表面。 导电基板具有下部，并且由电绝缘基板包围并与顶表面共面的上部。 中间层具有直接形成在电绝缘基板下方的导电基板上方的第一部分和形成在第一部分和第二部分之间的第二部分和弯曲部分。 半导体堆叠层具有设置在电绝缘基板和上部上的具有高带隙的发光有源层。

    High-efficiency light-emitting device and manufacturing method thereof
    4.
    发明授权
    High-efficiency light-emitting device and manufacturing method thereof 有权
    高效发光元件及其制造方法

    公开(公告)号：US08994052B2

    公开(公告)日：2015-03-31

    申请号：US13161835

    申请日：2011-06-16

    申请人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    发明人： Chien-Fu Shen ,  Chao-Hsing Chen ,  Chien-Fu Huang ,  Shih-I Chen ,  Chiu-Lin Yao ,  Chia-Liang Hsu ,  Chen Ou

    IPC分类号： H01L33/00 ,  H01L33/58 ,  H01L33/10 ,  H01L33/22

    CPC分类号： H01L33/10 ,  H01L33/22

    摘要： A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.

    摘要翻译： 发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空 并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为 从与第一半导体层相对的第二半导体层的顶表面提取。

    Light-emitting device
    5.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US08759848B2

    公开(公告)日：2014-06-24

    申请号：US13545354

    申请日：2012-07-10

    申请人： Chao-Hsing Chen ,  Chien-Kai Chung ,  Hsin-Mao Liu ,  Chiu-Lin Yao ,  Chien-Fu Huang

    发明人： Chao-Hsing Chen ,  Chien-Kai Chung ,  Hsin-Mao Liu ,  Chiu-Lin Yao ,  Chien-Fu Huang

    IPC分类号： H01L33/08 ,  H01L25/075 ,  H01L33/62 ,  H01L33/38

    CPC分类号： H01L25/0753 ,  H01L25/0756 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/16

    摘要： The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.

    摘要翻译： 本发明提供一种发光装置，其包括基板; 多个第一发光二极管单元，其中每个第一发光二极管单元具有第一电极结构; 以及多个第一发光二极管单元中的多个第二发光二极管单元，其中每个第二发光二极管单元具有第二电极结构。 第二发光二极管单元的第二电极结构被翻转并与第一发光二极管单元的相邻的第一电极结构电连接。

    Light-emitting device having a roughened surface with different topographies
    7.
    发明授权
    Light-emitting device having a roughened surface with different topographies 有权
    具有不同形貌的粗糙表面的发光器件

    公开(公告)号：US08679874B2

    公开(公告)日：2014-03-25

    申请号：US13596811

    申请日：2012-08-28

    申请人： Chiu-Lin Yao ,  Ta-Cheng Hsu

    发明人： Chiu-Lin Yao ,  Ta-Cheng Hsu

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/387 ,  H01L2933/0016

    摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

    摘要翻译： 本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。 光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。 粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。 该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。

    Optoelectronic device
    8.
    发明授权
    Optoelectronic device 有权
    光电器件

    公开(公告)号：US08368094B2

    公开(公告)日：2013-02-05

    申请号：US12813621

    申请日：2010-06-11

    申请人： Min-Hsun Hsieh ,  Chien-Yuan Wang ,  Jin-Ywan Lin ,  Chiu-Lin Yao

    发明人： Min-Hsun Hsieh ,  Chien-Yuan Wang ,  Jin-Ywan Lin ,  Chiu-Lin Yao

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

    摘要翻译： 光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物（以下简称TCO），其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层，其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触，并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触 与半导体堆叠层。

    Light-emitting device having a roughened surface with different topographies
    9.
    发明授权
    Light-emitting device having a roughened surface with different topographies 有权
    具有不同形貌的粗糙表面的发光器件

    公开(公告)号：US08274092B2

    公开(公告)日：2012-09-25

    申请号：US12905795

    申请日：2010-10-15

    申请人： Chiu-Lin Yao ,  To-Cheng Hsu

    发明人： Chiu-Lin Yao ,  To-Cheng Hsu

    IPC分类号： H01L33/22

    CPC分类号： H01L33/22 ,  H01L33/387 ,  H01L2933/0016

    摘要： This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semiconductor stack. The rough surface comprises a first region having a first topography and a second region having a second topography. The method comprises the steps of forming a semiconductor stack on a substrate, forming an electrode layer on the semiconductor stack, thermal treating the semiconductor stack, and wet etching the surface of the semiconductor stack to form a rough surface.

    摘要翻译： 本发明提供一种具有粗糙表面的光电半导体器件及其制造方法。 光电子半导体器件包括具有粗糙表面的半导体叠层和覆盖半导体叠层的电极层。 粗糙表面包括具有第一形貌的第一区域和具有第二形貌的第二区域。 该方法包括以下步骤：在衬底上形成半导体堆叠，在半导体堆叠上形成电极层，热处理半导体堆叠，以及湿蚀刻半导体叠层的表面以形成粗糙表面。