Invention Grant
- Patent Title: Combining ZTCR resistor with laser anneal for high performance PMOS transistor
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Application No.: US14875274Application Date: 2015-10-05
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Publication No.: US09455252B2Publication Date: 2016-09-27
- Inventor: Mahalingam Nandakumar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L27/07 ; H01L21/265 ; H01L21/8234 ; H01L27/06 ; H01L21/225 ; H01L21/8238 ; H01L49/02
Abstract:
An integrated circuit containing a PMOS transistor may be formed by implanting boron in the p-channel source drain (PSD) implant step at a dose consistent with effective channel length control, annealing the PSD implant, and subsequently concurrently implanting boron into a polysilicon resistor with a zero temperature coefficient of resistance using an implant mask which also exposes the PMOS transistor, followed by a millisecond anneal.
Public/Granted literature
- US20160035720A1 COMBINING ZTCR RESISTOR WITH LASER ANNEAL FOR HIGH PERFORMANCE PMOS TRANSISTOR Public/Granted day:2016-02-04
Information query
IPC分类:
