Invention Grant
- Patent Title: Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter
- Patent Title (中): 逆变器包括二维材料,其制造方法和逻辑器件包括逆变器
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Application No.: US14265769Application Date: 2014-04-30
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Publication No.: US09455256B2Publication Date: 2016-09-27
- Inventor: Jin-seong Heo , Seong-jun Park , Hyeon-jin Shin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0142434 20131121
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/66 ; H01L29/51 ; H01L21/8238 ; H01L29/78 ; H01L29/267 ; H01L29/778 ; H01L29/24 ; H01L29/16

Abstract:
Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.
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