公开(公告)号：US09281404B2

公开(公告)日：2016-03-08

申请号：US13733304

申请日：2013-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hee-jun Yang ,  Hyun-jong Chung

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L29/78684 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/78696

Abstract: A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.

Abstract translation: 开关器件包括在第一电极和形成在衬底上的第二电极之间的三维堆叠结构中形成的半导体层，石墨烯层，栅极绝缘层和栅极。

公开(公告)号：US09040957B2

公开(公告)日：2015-05-26

申请号：US13772693

申请日：2013-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L29/16 ,  B82Y10/00 ,  H01L29/10

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract translation: 根据示例性实施例，场效应晶体管包括在衬底上的石墨烯通道层。 石墨烯通道层限定狭缝。 源电极和漏极彼此间隔开并布置成向石墨烯通道层施加电压。 栅极绝缘层在石墨烯沟道层和栅电极之间。

公开(公告)号：US09595361B2

公开(公告)日：2017-03-14

申请号：US14337741

申请日：2014-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-jin Shin ,  Seong-jun Park ,  Jae-ho Lee ,  Seong-Jun Jeong

IPC: H01L21/30 ,  H01L21/46 ,  H01B1/08 ,  C23C14/08 ,  C23C14/02 ,  C23C16/02 ,  C23C16/40

CPC classification number: H01B1/08 ,  C23C14/025 ,  C23C14/08 ,  C23C16/0281 ,  C23C16/40 ,  Y10T428/265

Abstract: A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.

Abstract translation: 公开了一种薄膜结构，包括金属种子层，以及通过使用金属种子层在导电性基板上形成氧化物薄膜的方法。 薄膜结构包括透明导电基板，沉积在透明导电基板上的金属籽晶层和沉积在金属籽晶层上的金属氧化物层。

公开(公告)号：US09525076B2

公开(公告)日：2016-12-20

申请号：US13960256

申请日：2013-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Hyun-jong Chung ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Jin-seong Heo

IPC: H01L29/792 ,  B82Y10/00 ,  H01L21/28 ,  H01L29/47 ,  H01L29/788 ,  H01L29/16 ,  G11C11/40 ,  H01L29/778 ,  G11C16/04 ,  H01L51/05

CPC classification number: H01L29/792 ,  B82Y10/00 ,  G11C11/40 ,  G11C16/0466 ,  H01L21/28273 ,  H01L29/1606 ,  H01L29/47 ,  H01L29/7781 ,  H01L29/788 ,  H01L51/0512 ,  Y10S977/734 ,  Y10S977/938

Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.

Abstract translation: 石墨烯存储器包括在导电半导体衬底上彼此间隔开的源极和漏极，与导电半导体衬底接触并与源极和漏极间隔开并且在源极和漏极之间以及在石墨烯层上的栅电极的石墨烯层。 在导电半导体衬底和石墨烯层之间形成肖特基势垒，使得石墨烯层用作用于存储电荷的电荷捕获层。

公开(公告)号：US09312368B2

公开(公告)日：2016-04-12

申请号：US14334028

申请日：2014-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Kyung-eun Byun ,  Hyun-jae Song ,  Hyeon-jin Shin ,  Min-Hyun Lee ,  In-kyeong Yoo ,  Seong-jun Park

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/16 ,  H01L29/165 ,  H01L29/267

CPC classification number: H01L29/66977 ,  H01L21/76224 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/1606 ,  H01L29/165 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/78

Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Abstract translation: 公开了一种包括分离的接点的石墨烯器件及其制造方法。 石墨烯装置是其中使用石墨烯作为通道的场效应晶体管（FET）。 源电极和漏电极不直接接触石墨烯通道，并且由掺杂半导体形成的结接点分别设置在石墨烯通道和源电极之间以及石墨烯通道和漏电极之间。 因此，在由于石墨烯通道和接合点之间的阻挡而不向栅电极施加电压的关闭状态下，载体可能不移动。 结果，石墨烯器件在断开状态下可能具有低电流。

公开(公告)号：US09455256B2

公开(公告)日：2016-09-27

申请号：US14265769

申请日：2014-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-seong Heo ,  Seong-jun Park ,  Hyeon-jin Shin

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/267 ,  H01L29/778 ,  H01L29/24 ,  H01L29/16

CPC classification number: H01L27/0922 ,  H01L21/823807 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/242 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7827

Abstract: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.

Abstract translation: 包括二维（2D）材料的逆变器，其制造方法以及包括逆变器的逻辑器件。 反相器可以包括彼此连接的第一晶体管和第二晶体管，并且第一和第二晶体管层可以包括2D材料。 第一晶体管可以包括第一石墨烯层和与第一石墨烯层接触的第一2D半导体层，并且第二晶体管可以包括第二石墨烯层和与第二石墨烯层接触的第二2D半导体层。 第一2D半导体层可以是p型半导体，第二2D半导体层可以是n型半导体。 第一2D半导体层可以布置在第二2D半导体层的侧面。

公开(公告)号：US09306005B2

公开(公告)日：2016-04-05

申请号：US14103079

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-eun Byun ,  Seong-jun Park ,  David Seo ,  Hyun-jae Song ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/45 ,  H01L29/739 ,  H01L29/786 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/1606 ,  H01L29/1087 ,  H01L29/45 ,  H01L29/452 ,  H01L29/456 ,  H01L29/458 ,  H01L29/7391 ,  H01L29/78 ,  H01L29/78618

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm−3, and a depletion width of less than or equal to 3 nm.

Abstract translation: 根据示例性实施例，电子设备包括：半导体层; 直接接触所述半导体层的期望（和/或备选地预定）区域的石墨烯; 和石墨烯上的金属层。 半导体层的期望（和/或备选地）预定区域包括以下之一：恒定的掺杂密度，等于或小于1019cm-3的掺杂密度以及小于或等于3nm的耗尽宽度 。

公开(公告)号：US09054708B2

公开(公告)日：2015-06-09

申请号：US13737450

申请日：2013-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-wook Kim ,  Seong-jun Park ,  David Seo ,  Young-jun Yun ,  Yung-hee Yvette Lee ,  Chang-seung Lee

IPC: G06F3/041 ,  H03K17/96 ,  B82Y15/00

CPC classification number: H03K17/96 ,  B82Y15/00 ,  H03K17/962

Abstract: A touch sensor using a graphene diode and/or a touch panel including the touch sensor. The touch sensor includes a first sensing electrode configured to sense a touch; a first output line configured to transmit an electrical signal; and a first diode device including a first control terminal connected to the first sensing electrode, a first anode terminal connected to a voltage application unit, and a first cathode terminal connected to the first output line.

Abstract translation: 使用石墨烯二极管的触摸传感器和/或包括触摸传感器的触摸面板。 所述触摸传感器包括被配置为感测触摸的第一感测电极; 配置为发送电信号的第一输出线; 以及第一二极管器件，包括连接到第一感测电极的第一控制端子，连接到电压施加单元的第一阳极端子和连接到第一输出线的第一阴极端子。

公开(公告)号：US09053932B2

公开(公告)日：2015-06-09

申请号：US13917786

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Wook Lee ,  Hyeon-jin Shin ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Yun-sung Woo ,  Jae-ho Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/20 ,  H01L21/36 ,  C01B31/04 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L21/02527 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02656 ,  H01L29/1606

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract translation: 制备石墨烯的方法包括在基板上形成碳化硅薄膜，在碳化硅薄膜上形成金属薄膜，通过加热碳化硅薄膜和金属薄膜，在基板上形成金属复合层和石墨烯 电影。

公开(公告)号：US11062818B2

公开(公告)日：2021-07-13

申请号：US14588734

申请日：2015-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-jun Jeong ,  Seong-jun Park ,  Hyeon-jin Shin ,  Yea-hyun Gu ,  Hyoung-sub Kim ,  Jae-hyun Yang

IPC: B32B9/00 ,  H01B1/04 ,  C23C16/02 ,  C23C16/455 ,  H01L29/51 ,  H01L29/778 ,  C23C16/40 ,  H01L29/16

Abstract: Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.