Invention Grant
US09455265B2 Semiconductor 3D stacked structure and manufacturing method of the same
有权
半导体3D堆叠结构及其制造方法相同
- Patent Title: Semiconductor 3D stacked structure and manufacturing method of the same
- Patent Title (中): 半导体3D堆叠结构及其制造方法相同
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Application No.: US14091375Application Date: 2013-11-27
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Publication No.: US09455265B2Publication Date: 2016-09-27
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/66 ; H01L27/112
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a first stacked structure. The first stacked structure includes a first stacked portion disposed along a first direction, at least one second stacked portion connected with the first stacked portion and disposed along a second direction perpendicular to the first direction, and at least one third stacked portion connected with the first direction and arranged alternately with the second stacked portion along the first direction. The width of the third stacked portion is smaller than the width of the second stacked portion along the second direction.
Public/Granted literature
- US20150145012A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2015-05-28
Information query
IPC分类:
