Invention Grant
- Patent Title: Thin film transistor array panel and method of manufacturing the panel
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Application No.: US15053807Application Date: 2016-02-25
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Publication No.: US09455278B2Publication Date: 2016-09-27
- Inventor: Sho Yeon Kim , Hyun Kim , Eun Hye Park , Byung Hwan Chu , Seung-Ha Choi
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2014-0003549 20140110
- Main IPC: H01L31/036
- IPC: H01L31/036 ; H01L27/12 ; H01L29/786

Abstract:
A thin film transistor array panel includes: a gate line disposed on a substrate and including a first connection member of a gate driver region and a gate electrode of a display area, a gate insulating layer disposed on the substrate and having a first contact hole exposing the first connection member, a semiconductor layer disposed on a region of the gate insulating layer, a data line disposed on the gate insulating layer and the semiconductor layer and including a drain electrode, a source electrode, and a second connection member connected to the first connection member through the first contact hole, a passivation layer disposed on the data line, the source electrode, the drain electrode, and the second connection member, and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode. A horizontal width of the first contact hole ranges from 1 to 2 μm.
Public/Granted literature
- US20160181284A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE PANEL Public/Granted day:2016-06-23
Information query
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