Invention Grant
- Patent Title: Transistor device structure that includes polycrystalline semiconductor thin film that has large grain size
- Patent Title (中): 晶体管器件结构包括晶粒尺寸大的多晶半导体薄膜
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Application No.: US14224503Application Date: 2014-03-25
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Publication No.: US09455350B2Publication Date: 2016-09-27
- Inventor: Jia-Min Shieh , Wen-Hsien Huang , Chang-Hong Shen , Chih-Chao Yang , Tung-Ying Hsieh
- Applicant: National Applied Research Laboratories
- Applicant Address: TW Taipei
- Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
- Current Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
- Current Assignee Address: TW Taipei
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/088 ; H01L29/04 ; H01L27/12 ; H01L21/822 ; H01L27/06
Abstract:
A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline semiconductor thin film is disposed on the substrate. A grain diameter of the first polycrystalline semiconductor thin film is greater than 1 micrometer and a thickness of the first polycrystalline semiconductor thin film is less than three hundredths of the grain diameter. The first transistor unit is disposed on the first polycrystalline semiconductor thin film and includes a first gate dielectric layer and a first gate structure. The first gate dielectric layer is disposed on a surface of the first polycrystalline thin film semiconductor. The first gate structure is disposed on a surface of the first gate dielectric layer.
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