Invention Grant
US09455723B2 Leakage compensation circuit for phase-locked loop (PLL) large thin oxide capacitors
有权
漏电补偿电路用于锁相环(PLL)大型薄氧化物电容器
- Patent Title: Leakage compensation circuit for phase-locked loop (PLL) large thin oxide capacitors
- Patent Title (中): 漏电补偿电路用于锁相环(PLL)大型薄氧化物电容器
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Application No.: US14743360Application Date: 2015-06-18
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Publication No.: US09455723B2Publication Date: 2016-09-27
- Inventor: Mohammad Bagher Vahid Far , Ara Bicakci , Alireza Khalili , Ashkan Borna , Thinh Cat Nguyen
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H03L7/06
- IPC: H03L7/06 ; H03L7/08 ; H03L7/093 ; H02M3/07

Abstract:
Certain aspects of the present disclosure provide methods and apparatus for compensating, or at least adjusting, for capacitor leakage. One example method generally includes determining a leakage voltage corresponding to a leakage current of a capacitor in a filter for a phase-locked loop (PLL), wherein the determining comprises closing a set of switches for discontinuous sampling of the leakage voltage; based on the sampled leakage voltage, generating a sourced current approximately equal to the leakage current; and injecting the sourced current into the capacitor.
Public/Granted literature
- US20160254817A1 LEAKAGE COMPENSATION CIRCUIT FOR PHASE-LOCKED LOOP (PLL) LARGE THIN OXIDE CAPACITORS Public/Granted day:2016-09-01
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