发明授权
- 专利标题: CMOS compatible BioFET
- 专利标题(中): CMOS兼容的BioFET
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申请号: US13480161申请日: 2012-05-24
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公开(公告)号: US09459234B2公开(公告)日: 2016-10-04
- 发明人: Alexander Kalnitsky , Yi-Shao Liu , Kai-Chih Liang , Chia-Hua Chu , Chun-Ren Cheng , Chun-Wen Cheng
- 申请人: Alexander Kalnitsky , Yi-Shao Liu , Kai-Chih Liang , Chia-Hua Chu , Chun-Ren Cheng , Chun-Wen Cheng
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”)
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd., (“TSMC”)
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: H01L51/05
- IPC分类号: H01L51/05 ; G01N27/414 ; H01L51/00
摘要:
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
公开/授权文献
- US20130105868A1 CMOS COMPATIBLE BIOFET 公开/授权日:2013-05-02
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