Invention Grant
US09461055B2 Advanced metal-nitride-oxide-silicon multiple-time programmable memory
有权
先进的金属氮化物 - 氧化硅多次可编程存储器
- Patent Title: Advanced metal-nitride-oxide-silicon multiple-time programmable memory
- Patent Title (中): 先进的金属氮化物 - 氧化硅多次可编程存储器
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Application No.: US14280213Application Date: 2014-05-16
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Publication No.: US09461055B2Publication Date: 2016-10-04
- Inventor: Xia Li , Zhongze Wang , Daniel Wayne Perry
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L27/112
- IPC: H01L27/112 ; G11C11/40 ; G11C7/00 ; G11C16/04 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/792 ; H01L27/115
Abstract:
An advanced metal-nitride-oxide-silicon (MNOS) multiple time programmable (MTP) memory is provided. In an example, an apparatus includes a two field effect transistor (2T field FET) metal-nitride-oxide-silicon (MNOS) MTP memory. The 2T field FET MNOS MTP memory can include an interlayer dielectric (ILD) oxide region that is formed on a well and separates respective gates of first and second transistors from the well. A control gate is located between the respective gates of the first and second transistors, and a silicon-nitride-oxide (SiN) region is located between a metal portion of the control gate and a portion of the ILD oxide region.
Public/Granted literature
- US20150333072A1 ADVANCED METAL-NITRIDE-OXIDE-SILICON MULTIPLE-TIME PROGRAMMABLE MEMORY Public/Granted day:2015-11-19
Information query
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