Invention Grant
- Patent Title: Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device
- Patent Title (中): 集成分压器的半导体器件和用于制造半导体器件的工艺
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Application No.: US14309357Application Date: 2014-06-19
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Publication No.: US09461104B2Publication Date: 2016-10-04
- Inventor: Vincenzo Palumbo , Mirko Venturato
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Seed IP Law Group PLLC
- Priority: ITTO2013A0541 20130628
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L27/02 ; H01L27/06 ; H01L29/40 ; H01L29/66 ; H01L29/78 ; G01R15/04 ; H01L23/58 ; H01L29/06 ; H01L29/10
Abstract:
A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.
Public/Granted literature
- US20150001677A1 SEMICONDUCTOR DEVICE INTEGRATING A VOLTAGE DIVIDER AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2015-01-01
Information query
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