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1.发明授权Semiconductor device integrating a voltage divider and process for manufacturing a semiconductor device 有权集成分压器的半导体器件和用于制造半导体器件的工艺公开(公告)号：US09461104B2
公开(公告)日：2016-10-04
申请号：US14309357
申请日：2014-06-19
Applicant: STMicroelectronics S.r.l.
Inventor： Vincenzo Palumbo , Mirko Venturato
IPC: H01L49/02 , H01L23/522 , H01L27/02 , H01L27/06 , H01L29/40 , H01L29/66 , H01L29/78 , G01R15/04 , H01L23/58 , H01L29/06 , H01L29/10
CPC classification number: H01L28/20 , G01R15/04 , H01L23/5225 , H01L23/5228 , H01L23/585 , H01L27/0207 , H01L27/0629 , H01L29/0696 , H01L29/1095 , H01L29/405 , H01L29/66681 , H01L29/7817 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.
Abstract translation: 半导体器件包括：半导体衬底; 高压第一电阻结构，其沿着衬底上方的螺旋路径延伸并且通过第一介电层与衬底分离; 以及导电屏蔽结构，包括多个第一屏蔽条，其沿着第一电阻结构的相应部分依次布置并且通过第二电介质层与第一电阻结构分离。
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2.发明申请SEMICONDUCTOR DEVICE INTEGRATING A VOLTAGE DIVIDER AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权集成电压分压器的半导体器件和制造半导体器件的工艺公开(公告)号：US20150001677A1
公开(公告)日：2015-01-01
申请号：US14309357
申请日：2014-06-19
Applicant: STMicroelectronics S.r.l.
Inventor： Vincenzo Palumbo , Mirko Venturato
IPC: H01L49/02
CPC classification number: H01L28/20 , G01R15/04 , H01L23/5225 , H01L23/5228 , H01L23/585 , H01L27/0207 , H01L27/0629 , H01L29/0696 , H01L29/1095 , H01L29/405 , H01L29/66681 , H01L29/7817 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.
Abstract translation: 半导体器件包括：半导体衬底; 高压第一电阻结构，其沿着衬底上方的螺旋路径延伸并且通过第一介电层与衬底分离; 以及导电屏蔽结构，包括多个第一屏蔽条，其沿着第一电阻结构的相应部分依次布置并且通过第二电介质层与第一电阻结构分离。
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