Invention Grant
- Patent Title: Double/multiple fin structure for FinFET devices
-
Application No.: US14822345Application Date: 2015-08-10
-
Publication No.: US09461111B2Publication Date: 2016-10-04
- Inventor: InSoo Jung , Wonwoo Kim
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L29/06 ; H01L21/308 ; H01L21/02 ; H01L29/78 ; H01L29/161 ; H01L29/66
Abstract:
A method of forming double and/or multiple numbers of fins of a FinFET device using a Si/SiGe selective epitaxial growth process and the resulting device are provided. Embodiments include forming a Si pillar in an oxide layer, the Si pillar having a bottom portion and a top portion; removing the top portion of the Si pillar; forming a SiGe pillar on the bottom portion of the Si pillar; reducing the SiGe pillar; forming a first set of Si fins on opposite sides of the reduced SiGe pillar; removing the SiGe pillar; replacing the Si fins with SiGe fins; reducing the SiGe fins; forming a second set of Si fins on opposite sides of the SiGe fins; and removing the SiGe fins.
Public/Granted literature
- US20150349054A1 DOUBLE/MULTIPLE FIN STRUCTURE FOR FINFET DEVICES Public/Granted day:2015-12-03
Information query
IPC分类:
