Invention Grant
- Patent Title: Method for creating self-aligned transistor contacts
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Application No.: US14963789Application Date: 2015-12-09
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Publication No.: US09461128B2Publication Date: 2016-10-04
- Inventor: Mark A. Zaleski , Andy Chih-Hung Wei , Jason E. Stephens , Tuhin Guha Neogi , Guillaume Bouche
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L21/82 ; H01L29/66 ; H01L29/51 ; H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L21/8238 ; H01L29/165

Abstract:
Embodiments of the present invention provide improved methods of contact formation. A self aligned contact scheme with reduced lithography requirements is disclosed. This reduces the risk of shorts between source/drains and gates, while providing improved circuit density. Cavities are formed adjacent to the gates, and a fill metal is deposited in the cavities to form contact strips. A patterning mask is then used to form smaller contacts by performing a partial metal recess of the contact strips.
Public/Granted literature
- US20160093704A1 METHOD FOR CREATING SELF-ALIGNED TRANSISTOR CONTACTS Public/Granted day:2016-03-31
Information query
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