Invention Grant
US09462402B2 Monolithic complementary metal-oxide semiconductor (CMOS)-integrated silicon microphone
有权
单片互补金属氧化物半导体(CMOS) - 集成硅麦克风
- Patent Title: Monolithic complementary metal-oxide semiconductor (CMOS)-integrated silicon microphone
- Patent Title (中): 单片互补金属氧化物半导体(CMOS) - 集成硅麦克风
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Application No.: US14620368Application Date: 2015-02-12
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Publication No.: US09462402B2Publication Date: 2016-10-04
- Inventor: Chin-Yi Cho , Chia-Hua Chu , Chun-Wen Cheng , Jung-Huei Peng , Yao-Te Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01R31/00
- IPC: H01R31/00 ; H04R31/00 ; H04R19/04

Abstract:
Some embodiments relate to a manufacturing process that combines a MEMS capacitor of a microelectromechanical systems (MEMS) microphone and an integrated circuit (IC) onto a single substrate. A dielectric is formed over a device substrate. A conductive diaphragm and a conductive backplate are formed within the dielectric, with a sacrificial portion of the dielectric between them. A first recess is formed, which extends through the dielectric to an upper surface of the conductive diaphragm. A second recess is formed, which extends through the substrate and dielectric to a lower surface of the conductive backplate. The sacrificial layer is removed to create an air gap between the conductive diaphragm and the conductive backplate. The air gap joins the first and second recesses to form a cavity that extends continuously through the dielectric and the substrate. The present disclosure is also directed to the semiconductor structure of the MEMS microphone resulting from the manufacturing process.
Public/Granted literature
- US20160241979A1 MONOLITHIC COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) - INTEGRATED SILICON MICROPHONE Public/Granted day:2016-08-18
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