发明授权
- 专利标题: Stretch dummy cell insertion in finFET process
- 专利标题(中): 在finFET工艺中拉伸虚拟细胞插入
-
申请号: US14739108申请日: 2015-06-15
-
公开(公告)号: US09465901B2公开(公告)日: 2016-10-11
- 发明人: Li-Sheng Ke , Jia-Rong Hsu , Hung-Lung Lin , Wen-Ju Yang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: G06F17/00
- IPC分类号: G06F17/00 ; G06F17/50 ; H01L29/66 ; H01L21/8234 ; H01L21/84 ; H01L29/78 ; H01L27/088
摘要:
A method embodiment includes identifying, by a processor, an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins. The method further includes providing a standard dummy fin cell and forming an expanded dummy fin cell. The standard dummy fin cell includes a plurality of partitions. The expanded dummy fin cell is larger than the standard dummy fin cell, and the expanded dummy fin cell includes integer multiples of each of the plurality of partitions. The empty region is filled with a plurality of dummy fin cells, wherein the plurality of dummy fin cells includes the expanded dummy fin cell. The plurality of dummy fin cells is implemented in an IC.
公开/授权文献
- US20150278420A1 Stretch Dummy Cell Insertion in FinFET Process 公开/授权日:2015-10-01
信息查询