Stretch dummy cell insertion in finFET process
    1.
    发明授权
    Stretch dummy cell insertion in finFET process 有权
    在finFET工艺中拉伸虚拟细胞插入

    公开(公告)号:US09465901B2

    公开(公告)日:2016-10-11

    申请号:US14739108

    申请日:2015-06-15

    摘要: A method embodiment includes identifying, by a processor, an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins. The method further includes providing a standard dummy fin cell and forming an expanded dummy fin cell. The standard dummy fin cell includes a plurality of partitions. The expanded dummy fin cell is larger than the standard dummy fin cell, and the expanded dummy fin cell includes integer multiples of each of the plurality of partitions. The empty region is filled with a plurality of dummy fin cells, wherein the plurality of dummy fin cells includes the expanded dummy fin cell. The plurality of dummy fin cells is implemented in an IC.

    摘要翻译: 方法实施例包括由处理器识别集成电路(IC)布局中的空区域,其中空区域是不包括任何活动鳍片的区域。 该方法还包括提供标准虚拟鳍片单元并形成扩展的虚拟鳍片单元。 标准虚拟鳍片单元包括多个隔板。 扩展的虚拟鳍片单元大于标准虚拟鳍片单元,并且扩展的虚拟鳍片单元包括多个分区中的每一个的整数倍。 空的区域填充有多个虚拟鳍片单元,其中多个虚拟鳍片单元包括扩展的虚拟鳍片单元。 多个虚拟鳍片单元在IC中实现。

    Stretch Dummy Cell Insertion in FinFET Process
    2.
    发明申请
    Stretch Dummy Cell Insertion in FinFET Process 审中-公开
    FinFET工艺中的拉伸虚拟电池插入

    公开(公告)号:US20150278420A1

    公开(公告)日:2015-10-01

    申请号:US14739108

    申请日:2015-06-15

    IPC分类号: G06F17/50

    摘要: A method embodiment includes identifying, by a processor, an empty region in an integrated circuit (IC) layout, wherein the empty region is a region not including any active fins. The method further includes providing a standard dummy fin cell and forming an expanded dummy fin cell. The standard dummy fin cell includes a plurality of partitions. The expanded dummy fin cell is larger than the standard dummy fin cell, and the expanded dummy fin cell includes integer multiples of each of the plurality of partitions. The empty region is filled with a plurality of dummy fin cells, wherein the plurality of dummy fin cells includes the expanded dummy fin cell. The plurality of dummy fin cells is implemented in an IC.

    摘要翻译: 方法实施例包括由处理器识别集成电路(IC)布局中的空区域,其中空区域是不包括任何活动鳍片的区域。 该方法还包括提供标准虚拟鳍片单元并形成扩展的虚拟鳍片单元。 标准虚拟鳍片单元包括多个隔板。 扩展的虚拟鳍片单元大于标准虚拟鳍片单元,并且扩展的虚拟鳍片单元包括多个分区中的每一个的整数倍。 空的区域填充有多个虚拟鳍片单元,其中多个虚拟鳍片单元包括扩展的虚拟鳍片单元。 多个虚拟鳍片单元在IC中实现。