发明授权
- 专利标题： Microwave annealing apparatus and method of manufacturing a semiconductor device
- 专利标题（中）： 微波退火装置及其制造方法
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申请号： US13859153申请日： 2013-04-09
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公开(公告)号： US09466517B2公开(公告)日： 2016-10-11
- 发明人: Hiroshi Ohno , Tomonori Aoyama , Kiyotaka Miyano , Yoshinori Honguh , Masataka Shiratsuchi
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku, Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku, Tokyo
- 代理机构： Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- 优先权： JP2012-200499 20120912
- 主分类号： H05B6/64
- IPC分类号： H05B6/64 ; H05B6/74 ; H01L21/67 ; H05B6/68 ; H05B6/80 ; H01L21/324
摘要：
According to one embodiment, a microwave annealing apparatus is provided, including a housing shielding electromagnetic waves, a first electromagnetic wave source configured to apply a first electromagnetic wave into the housing, a second electromagnetic wave source configured to apply, into the housing, a second electromagnetic wave having a higher frequency than the first electromagnetic wave, a susceptor configured to hold a semiconductor substrate, made of a material transparent to the first electromagnetic wave and provided in the housing, a temperature measuring device configured to measure the temperature of the semiconductor substrate, and a control unit configured to control the power of each of the first and second electromagnetic wave sources in accordance with the temperature measured by the temperature measuring device.
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