Invention Grant
- Patent Title: Method of depositing metals using high frequency plasma
- Patent Title (中): 使用高频等离子体沉积金属的方法
-
Application No.: US13742596Application Date: 2013-01-16
-
Publication No.: US09466524B2Publication Date: 2016-10-11
- Inventor: Paul F. Ma , Guojun Liu , Annamalai Lakshmanan , Dien-Yeh Wu , Anantha K. Subramani
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; C23C16/34 ; C23C16/455 ; H01L21/285
Abstract:
Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.
Public/Granted literature
- US20130196507A1 Method Of Depositing Metals Using High Frequency Plasma Public/Granted day:2013-08-01
Information query
IPC分类:
