公开(公告)号：US11715667B2

公开(公告)日：2023-08-01

申请号：US17720836

申请日：2022-04-14

Applicant: Applied Materials, Inc.

Inventor： Anqing Cui ,  Dien-Yeh Wu ,  Wei V. Tang ,  Yixiong Yang ,  Bo Wang

IPC: C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687 ,  H01L21/768 ,  H01L21/48 ,  H01L21/02 ,  H01L21/285 ,  H01L23/532

CPC classification number: H01L21/76826 ,  C23C16/02 ,  C23C16/4584 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/28568 ,  H01L21/4871 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76877 ,  H01L23/53266

Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

公开(公告)号：US11421322B2

公开(公告)日：2022-08-23

申请号：US16520646

申请日：2019-07-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaoxiong Yuan ,  Yu Lei ,  Yi Xu ,  Kazuya Daito ,  Pingyan Lei ,  Dien-Yeh Wu ,  Umesh M. Kelkar ,  Vikash Banthia

IPC: C23C16/455 ,  H01L21/67

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

公开(公告)号：USRE48994E1

公开(公告)日：2022-03-29

申请号：US16432928

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman W. H. Lam ,  Dien-Yeh Wu

IPC: C23C16/455 ,  C23C16/44 ,  F17D3/00

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US20210159052A1

公开(公告)日：2021-05-27

申请号：US17101074

申请日：2020-11-23

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/455

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：USRE47440E1

公开(公告)日：2019-06-18

申请号：US15678883

申请日：2017-08-16

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC: F17D3/00 ,  F16K11/20

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US09466524B2

公开(公告)日：2016-10-11

申请号：US13742596

申请日：2013-01-16

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Guojun Liu ,  Annamalai Lakshmanan ,  Dien-Yeh Wu ,  Anantha K. Subramani

IPC: H01L21/44 ,  H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01L21/76838 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76841 ,  H01L21/76862

Abstract: Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.

Abstract translation: 提供了使用CVD和ALD技术沉积金属层，更具体地TaN层的方法。 在一个或多个实施例中，该方法包括将衬底顺序地暴露于金属前体，或更具体地钽前体，接着是高频等离子体。

公开(公告)号：US20240249918A1

公开(公告)日：2024-07-25

申请号：US18599767

申请日：2024-03-08

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/67 ,  H05H1/46

CPC classification number: H01J37/32357 ,  C23C16/45536 ,  C23C16/50 ,  H01J37/32422 ,  H01L21/67028 ,  H01L21/67069 ,  H05H1/4652 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/335

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US11955319B2

公开(公告)日：2024-04-09

申请号：US17844245

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: C23C16/50 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

CPC classification number: H01J37/32357 ,  C23C16/45536 ,  C23C16/50 ,  H01J37/32422 ,  H01L21/67028 ,  H01L21/67069 ,  H05H1/4652 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/335

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

公开(公告)号：US20220319837A1

公开(公告)日：2022-10-06

申请号：US17844346

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Yi Xu ,  Yufei Hu ,  Kazuya Daito ,  Yu Lei ,  Dien-Yeh Wu ,  Jallepally Ravi

IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32 ,  B08B7/00

Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

公开(公告)号：US20220319813A1

公开(公告)日：2022-10-06

申请号：US17844245

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Kazuya Daito ,  Yi Xu ,  Yu Lei ,  Takashi Kuratomi ,  Jallepally Ravi ,  Pingyan Lei ,  Dien-Yeh Wu

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  H05H1/46

Abstract: Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.