Invention Grant
US09466529B2 Masking method for semiconductor devices with high surface topography
有权
具有高表面形貌的半导体器件的掩模方法
- Patent Title: Masking method for semiconductor devices with high surface topography
- Patent Title (中): 具有高表面形貌的半导体器件的掩模方法
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Application No.: US14766412Application Date: 2014-01-29
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Publication No.: US09466529B2Publication Date: 2016-10-11
- Inventor: Guenther Koppitsch , Ewald Stueckler , Karl Rohracher , Jordi Teva
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: AMS AG
- Current Assignee: AMS AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP13154625 20130208
- International Application: PCT/EP2014/051715 WO 20140129
- International Announcement: WO2014/122055 WO 20140814
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; G03F7/09 ; H01L21/033
Abstract:
The method comprises the steps of providing a semiconductor body or substrate (1) with a recess or trench (2) in a main surface (10), applying a mask (3) on the main surface, the mask covering the recess or trench, so that the walls and bottom of the recess or trench and the mask together enclose a cavity (4), which is filled with a gas, and forming at least one opening (5) in the mask at a distance from the recess or trench, the distance (6) being adapted to allow the gas to escape from the cavity via the opening when the gas pressure exceeds an external pressure.
Public/Granted literature
- US20150380308A1 MASKING METHOD FOR SEMICONDUCTOR DEVICES WITH HIGH SURFACE TOPOGRAPHY Public/Granted day:2015-12-31
Information query
IPC分类:
