Invention Grant
- Patent Title: Semiconductor arrangement including buried anodic oxide and manufacturing method
- Patent Title (中): 半导体装置包括埋置阳极氧化物和制造方法
-
Application No.: US14594838Application Date: 2015-01-12
-
Publication No.: US09472395B2Publication Date: 2016-10-18
- Inventor: Hans-Joachim Schulze , Ingo Muri , Iris Moder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/74 ; H01L21/225
Abstract:
In accordance with a method of manufacturing a semiconductor arrangement, a first trench is formed into a semiconductor body from a first side. An anodic oxide structure is formed at a bottom side of the first trench by immersing the semiconductor body in an electrolyte and applying an anodizing voltage between the semiconductor body and an electrode in contact with the electrolyte.
Public/Granted literature
- US20160203977A1 Semiconductor Arrangement Including Buried Anodic Oxide and Manufacturing Method Public/Granted day:2016-07-14
Information query
IPC分类:
