Invention Grant
US09472413B2 Method for producing a pattern in an integrated circuit and corresponding integrated circuit
有权
用于在集成电路中生成图案的方法和相应的集成电路
- Patent Title: Method for producing a pattern in an integrated circuit and corresponding integrated circuit
- Patent Title (中): 用于在集成电路中生成图案的方法和相应的集成电路
-
Application No.: US14451161Application Date: 2014-08-04
-
Publication No.: US09472413B2Publication Date: 2016-10-18
- Inventor: Yoann Goasduff , Abderrezak Marzaki
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1357766 20130805
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/76 ; H01L21/308 ; H01L21/266 ; H01L21/033
Abstract:
At least one projecting block is formed in an element. The projecting block is then covered with a first cover layer so as to form a concave ridge self-aligned with the projecting block and having its concavity face towards the projecting block. A first trench is then formed in the ridge in a manner that is self-aligned with both the ridge and the projecting block. The first trench extends to a depth which reaches the projecting block. The projecting block is etched using the ridge and first trench as an etching mask to form a second trench in the projecting block that is self-aligned with the first trench. A pattern is thus produced by the second trench and unetched parts of the projecting block which delimit the second trench.
Public/Granted literature
- US20150037966A1 METHOD FOR PRODUCING A PATTERN IN AN INTEGRATED CIRCUIT AND CORRESPONDING INTEGRATED CIRCUIT Public/Granted day:2015-02-05
Information query
IPC分类:
