Invention Grant
US09472446B2 Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device
有权
形成具有唯一栅极配置的FinFET半导体器件的方法，以及所得到的FinFET器件
- Patent Title: Methods of forming a FinFET semiconductor device with a unique gate configuration, and the resulting FinFET device
- Patent Title (中): 形成具有唯一栅极配置的FinFET半导体器件的方法，以及所得到的FinFET器件
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Application No.: US14307902Application Date: 2014-06-18
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Publication No.: US09472446B2Publication Date: 2016-10-18
- Inventor: Ruilong Xie , Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/762 ; H01L29/78 ; H01L29/66 ; H01L29/51 ; H01L29/10 ; H01L21/306 ; H01L21/3065 ; H01L21/308 ; H01L21/84 ; H01L21/8238 ; H01L21/8234
Abstract:
One method disclosed includes, among other things, forming an overall fin structure having a stepped cross-sectional profile, the fin structure having an upper part and a lower part positioned under the upper part, wherein the upper part has a first width and the lower part has a second width that is less than the first width, forming a layer of insulating material in trenches adjacent the overall fin structure such that the upper part of the overall fin structure and a portion of the lower part of the overall fin structure are exposed above an upper surface of the layer of insulating material, and forming a gate structure around the exposed upper part of the overall fin structure and the exposed portion of the lower part of the overall fin structure.
Public/Granted literature
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