Methods for selectively etching titanium and titanium nitride are disclosed. In some embodiments the method involve exposing a workpiece to a first solution to remove titanium nitride, exposing the workpiece to a second solution to remove titanium, and exposing the workpiece to a third solution to remove residual titanium nitride, if any. The solutions are formulated such that they may selectively remove titanium and/or titanium nitride, while not etching or not substantially etching certain other materials such as dielectric materials, oxides, and metals other than titanium.