Invention Grant
US09472470B2 Methods of forming FinFET with wide unmerged source drain EPI
有权
形成具有宽未源源极漏极EPI的FinFET的方法
- Patent Title: Methods of forming FinFET with wide unmerged source drain EPI
- Patent Title (中): 形成具有宽未源源极漏极EPI的FinFET的方法
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Application No.: US14564323Application Date: 2014-12-09
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Publication No.: US09472470B2Publication Date: 2016-10-18
- Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Dominic J. Schepis
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/04 ; H01L21/8238 ; H01L21/8234

Abstract:
A method including forming fin spacers on opposite sidewalls of a semiconductor fin made from a semiconductor substrate, forming a dielectric layer in direct contact with the fin spacers such that a top surface of the fin and a top surface of the fin spacers remain exposed, recessing a portion of the fin between the fin spacers, removing the fin spacers to create an opening, and epitaxially growing an unmerged source drain region in the opening, where lateral growth of the unmerged source drain region is constrained on opposite sides by the dielectric layer.
Public/Granted literature
- US20160163826A1 FINFET WITH WIDE UNMERGED SOURCE DRAIN EPI Public/Granted day:2016-06-09
Information query
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