Invention Grant
US09472535B2 Strain tunable light emitting diodes with germanium P-I-N heterojunctions
有权
具有锗P-I-N异质结的应变可调谐发光二极管
- Patent Title: Strain tunable light emitting diodes with germanium P-I-N heterojunctions
- Patent Title (中): 具有锗P-I-N异质结的应变可调谐发光二极管
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Application No.: US14074955Application Date: 2013-11-08
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Publication No.: US09472535B2Publication Date: 2016-10-18
- Inventor: Max G. Lagally , José Roberto Sänchez Pérez
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L31/028
Abstract:
Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.
Public/Granted literature
- US20150129911A1 STRAIN TUNABLE LIGHT EMITTING DIODES WITH GERMANIUM P-I-N HETEROJUNCTIONS Public/Granted day:2015-05-14
Information query
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