公开(公告)号：US20210367138A1

公开(公告)日：2021-11-25

申请号：US16881305

申请日：2020-05-22

Applicant: Wisconsin Alumni Research Foundation ,  University of Hamburg

Inventor： Max G. Lagally ,  Abhishek Bhat ,  Frank Steele Flack ,  Shelley Ann Scott ,  Robert H. Blick

IPC: H01L41/312 ,  H01L41/04 ,  H01L41/047 ,  H01L41/09 ,  H01L41/187

Abstract: Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.

公开(公告)号：US10930490B1

公开(公告)日：2021-02-23

申请号：US16727201

申请日：2019-12-26

Applicant: Wisconsin Alumni Research Foundation ,  The Regents of the University of New Mexico

Inventor： Max G. Lagally ,  Francesca Cavallo ,  Vijay Saradhi Mangu

IPC: H01L21/02 ,  H01L21/308 ,  B82Y20/00 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/8258 ,  H01L29/16 ,  H01L27/088 ,  G02B5/30 ,  B82Y40/00

Abstract: Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.

公开(公告)号：US20150270350A1

公开(公告)日：2015-09-24

申请号：US14222163

申请日：2014-03-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  Francesca Cavallo ,  Richard Rojas-Delgado

IPC: H01L29/16 ,  H01L21/18 ,  H01L29/161

CPC classification number: H01L29/1606 ,  H01L21/185 ,  H01L29/161

Abstract: Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Abstract translation: 提供了导电材料结构，结合结构的模拟电子装置和用于制造结构的方法。 该结构包括在半导体衬底上的一层石墨烯。 石墨烯层和基底由促进载流子从基底表面转移到石墨烯的界面区域分离。

公开(公告)号：US11588456B2

公开(公告)日：2023-02-21

申请号：US16882591

申请日：2020-05-25

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION ,  THE REGENTS OF THE UNIVERSITY OF NEW MEXICO

Inventor： Max G. Lagally ,  Matthew McLean Dwyer ,  Daniel Warren van der Weide ,  Abhishek Bhat ,  Francesca Cavallo ,  Divya Jyoti Prakash

IPC: H03F3/58 ,  H01J23/16 ,  H01J23/26 ,  H01J25/36

Abstract: Traveling-wave tube amplifiers and methods for making slow-wave structures for the amplifiers are provided. The SWSs include helical conductors that are self-assembled via the release of stressed electrically conductive strips from a sacrificial material. The helical conductors can be electroplated post-self-assembly to fortify the helix, reduce losses, and tailor the dimensions and operating parameters of the helix.

公开(公告)号：US09472535B2

公开(公告)日：2016-10-18

申请号：US14074955

申请日：2013-11-08

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  José Roberto Sänchez Pérez

IPC: H01L25/16 ,  H01L31/028

CPC classification number: H01L25/167 ,  H01L31/028 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

Abstract translation: 提供了包括Ge异质结结构的可调谐p-i-n二极管。 还提供了制造和使用可调谐p-i-n二极管的方法。 通过调整p-i-n异质结结构中的拉伸应变来提供可调性，这使得二极管能够在一定波长范围内发射辐射。

公开(公告)号：US20140024202A1

公开(公告)日：2014-01-23

申请号：US13945171

申请日：2013-07-18

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  Paul G. Evans ,  Clark S. Ritz

IPC: H01L35/34

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L35/22 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  Y10S977/70

Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.”

Abstract translation: 本发明提供非常适合用于热电应用的纳米线和纳米带。 纳米线和纳米带的特征在于周期性的组成纵向调制。 使用来自薄的半导体膜或“纳米膜”的平版印刷技术构建纳米线。

公开(公告)号：US20210202240A1

公开(公告)日：2021-07-01

申请号：US17134783

申请日：2020-12-28

Applicant: Wisconsin Alumni Research Foundation ,  The Regents of the University of New Mexico

Inventor： Max G. Lagally ,  Francesca Cavallo ,  Vijay Saradhi Mangu

IPC: H01L21/02 ,  H01L29/16 ,  H01L27/088 ,  H01L21/8258 ,  G02B5/30 ,  H01L21/3065 ,  H01L21/027

Abstract: Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.

公开(公告)号：US09324804B2

公开(公告)日：2016-04-26

申请号：US14222163

申请日：2014-03-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  Francesca Cavallo ,  Richard Rojas-Delgado

IPC: H01L29/16 ,  H01L29/161 ,  H01L21/18

CPC classification number: H01L29/1606 ,  H01L21/185 ,  H01L29/161

Abstract: Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Abstract translation: 提供了导电材料结构，结合结构的模拟电子装置和用于制造结构的方法。 该结构包括在半导体衬底上的一层石墨烯。 石墨烯层和基底由促进载流子从基底表面转移到石墨烯的界面区域分离。

公开(公告)号：US09181092B2

公开(公告)日：2015-11-10

申请号：US13945171

申请日：2013-07-18

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  Paul G. Evans ,  Clark S. Ritz

IPC: H01L21/20 ,  H01L21/36 ,  C23C16/54 ,  H01L35/14 ,  B82Y40/00 ,  B82Y30/00 ,  H01L29/06 ,  H01L29/12 ,  H01L35/22 ,  H01L35/32 ,  H01L35/34 ,  B82Y10/00 ,  H01L35/26

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L35/22 ,  H01L35/26 ,  H01L35/32 ,  H01L35/34 ,  Y10S977/70

Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.”

Abstract translation: 本发明提供非常适合用于热电应用的纳米线和纳米带。 纳米线和纳米带的特征在于周期性的组成纵向调制。 使用来自薄的半导体膜或“纳米膜”的平版印刷技术构建纳米线。

公开(公告)号：US20150129911A1

公开(公告)日：2015-05-14

申请号：US14074955

申请日：2013-11-08

Applicant: Wisconsin Alumni Research Foundation

Inventor： Max G. Lagally ,  José Roberto Sánchez Pérez

IPC: H01L29/78 ,  H01L33/34

CPC classification number: H01L25/167 ,  H01L31/028 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

Abstract translation: 提供了包括Ge异质结结构的可调谐p-i-n二极管。 还提供了制造和使用可调谐p-i-n二极管的方法。 通过调整p-i-n异质结结构中的拉伸应变来提供可调性，这使得二极管能够在一定波长范围内发射辐射。