发明授权
- 专利标题： Semiconductor device and fabrication method therefor
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13323538申请日： 2011-12-12
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公开(公告)号： US09472563B2公开(公告)日： 2016-10-18
- 发明人: Masatomi Okanishi
- 申请人： Masatomi Okanishi
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 优先权： JP2005-013763 20050727
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763 ; H01L27/115 ; H01L21/28
摘要：
A semiconductor device includes bit lines (12) that are provided in a semiconductor substrate (10) an ONO film (14) that is provided on the semiconductor substrate; word lines that are provided on the ONO film (14) and extend in a width direction of the bit lines (12); and a dummy layer (44) that extends in the width direction of the bit lines (12) and is provided in a bit-line contact region (40) having contact holes formed to connect the bit lines (12) with wiring layers (34). In accordance with the present invention, the proximity effect at the time of word line formation can be restrained, and the variation in the widths of the word lines can be made smaller, or current leakage between the bit lines and the semiconductor substrate can be restrained.
公开/授权文献
- US20120315750A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR 公开/授权日：2012-12-13
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