Invention Grant
US09472723B2 Deposition of semiconductor nanocrystals for light emitting devices
有权
用于发光器件的半导体纳米晶体的沉积
- Patent Title: Deposition of semiconductor nanocrystals for light emitting devices
- Patent Title (中): 用于发光器件的半导体纳米晶体的沉积
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Application No.: US14091355Application Date: 2013-11-27
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Publication No.: US09472723B2Publication Date: 2016-10-18
- Inventor: Vladimir Bulovic , Katherine Wei Song , Ronny Costi
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US MA Cambridge
- Agency: Steptoe & Johnson LLP
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L21/02 ; H01L51/50 ; H01L27/28 ; H01L33/00 ; H01L33/06 ; H01L51/42

Abstract:
A method of depositing semiconductor nanocrystals on a surface can include applying a voltage to the nanocrystals.
Public/Granted literature
- US20140147951A1 DEPOSITION OF SEMICONDUCTOR NANOCRYSTALS FOR LIGHT EMITTING DEVICES Public/Granted day:2014-05-29
Information query
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