Invention Grant
US09472948B2 On chip reverse polarity protection compliant with ISO and ESD requirements
有权
片上反极性保护符合ISO和ESD要求
- Patent Title: On chip reverse polarity protection compliant with ISO and ESD requirements
- Patent Title (中): 片上反极性保护符合ISO和ESD要求
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Application No.: US14042155Application Date: 2013-09-30
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Publication No.: US09472948B2Publication Date: 2016-10-18
- Inventor: Luca Petruzzi
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02 ; H01L29/78 ; H01L21/761 ; H01L29/866 ; H01L27/092

Abstract:
A semiconductor device is disclosed. In one embodiment a semiconductor device includes a semiconductor chip including a substrate, a ground terminal configured to be provided with a reference potential and a supply terminal electrically coupled to the substrate, the supply terminal configured to be provided with a load current and configured to be provided with a supply voltage between the substrate and the ground terminal. The semiconductor device further comprises an overvoltage protection circuit disposed in the semiconductor chip and coupled between the supply terminal and the ground terminal, the overvoltage protection circuit including a first transistor having a load current path coupled between the supply terminal and an internal ground node and a second transistor having a load current path coupled between the internal ground node and the ground terminal.
Public/Granted literature
- US20150092307A1 On Chip Reverse Polarity Protection Compliant with ISO and ESD Requirements Public/Granted day:2015-04-02
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