Invention Grant
- Patent Title: Self-biased charge pump
- Patent Title (中): 自偏置电荷泵
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Application No.: US14618369Application Date: 2015-02-10
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Publication No.: US09473022B2Publication Date: 2016-10-18
- Inventor: Dongmin Park , Lai Kan Leung , Jong Min Park
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Procopio, Cory, Hargreaves & Savitch, LLP
- Main IPC: H03L7/06
- IPC: H03L7/06 ; H02M3/07 ; H03L7/08

Abstract:
An apparatus including: a current source configured to generate current; a switching current source circuit coupled to the current source and a first bias node to allow the current to flow through the switching current source circuit into the first bias node; a first bias circuit configured to receive a first control signal from a phase detector, the first bias circuit configured to mirror the current flowing through the switching current source circuit in response to the first control signal; a second bias circuit coupled to the first bias circuit at an output node and a second bias node, the second bias circuit configured to receive a second control signal from the phase detector; and a transconductance amplifier configured to receive a feedback signal from the output node and generate an output current to control the second biasing node.
Public/Granted literature
- US20160233764A1 SELF-BIASED CHARGE PUMP Public/Granted day:2016-08-11
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