Invention Grant
- Patent Title: Input switch leakage compensation
- Patent Title (中): 输入开关漏电补偿
-
Application No.: US14491817Application Date: 2014-09-19
-
Publication No.: US09473085B2Publication Date: 2016-10-18
- Inventor: Hasnain Mohammedi Lakdawala , Ojas Mahendra Choksi , Bin Fan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Procopio, Cory, Hargreaves & Savitch, LLP
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H03F3/21 ; H04B1/00 ; H04B1/04 ; H04B1/525 ; H03F1/02 ; H03F1/22 ; H03F3/193 ; H03F3/24

Abstract:
An apparatus including: a first switch configured to provide a feed-forward path at an input of a first amplifier of a plurality of amplifiers coupled together at a single port, the feed-forward path configured to substantially reduce a leakage current into an input of a second amplifier of the plurality of amplifiers.
Public/Granted literature
- US20160072441A1 INPUT SWITCH LEAKAGE COMPENSATION Public/Granted day:2016-03-10
Information query