Invention Grant
US09476143B2 Methods using mask structures for substantially defect-free epitaxial growth
有权
使用掩模结构的方法用于基本上无缺陷的外延生长
- Patent Title: Methods using mask structures for substantially defect-free epitaxial growth
- Patent Title (中): 使用掩模结构的方法用于基本上无缺陷的外延生长
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Application No.: US13768462Application Date: 2013-02-15
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Publication No.: US09476143B2Publication Date: 2016-10-25
- Inventor: Benjamin Vincent , Voon Yew Thean , Liesbeth Witters
- Applicant: IMEC
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Main IPC: C30B25/04
- IPC: C30B25/04 ; C30B23/04 ; H01L21/02 ; H01L29/66 ; C30B19/00

Abstract:
Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, the method may comprise providing a substrate comprising a first crystalline material, where the first crystalline material has a first lattice constant; providing a mask structure on the substrate, where the mask structure comprises a first level comprising a first opening extending through the first level (where a bottom of the first opening comprises the substrate), and a second level on top of the first level, where the second level comprises a plurality of second trenches positioned at a non-zero angle with respect to the first opening. The method may further comprise epitaxially growing a second crystalline material on the bottom of the first opening, where the second crystalline material has a second lattice constant different than the first lattice constant and defects in the second crystalline material are trapped in the first opening.
Public/Granted literature
- US20130233238A1 Methods and Mask Structures for Substantially Defect-Free Epitaxial Growth Public/Granted day:2013-09-12
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