In a general aspect, a method of writing data in a nonvolatile memory can include performing a first erase or program cycle to write regular data in a first memory cell of the non-volatile memory by (i) applying at least one erase or program pulse to the first memory cell and (ii) determining the state, erased or programmed, of the first memory cell, and repeating (i) and (ii) if the first memory cell is not in the desired state. The method can also include applying a predetermined number of erase or program pulses to write fake data in a second memory cell.