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公开(公告)号：US20150124532A1
公开(公告)日：2015-05-07
申请号：US14406334
申请日：2013-06-28
申请人： INSIDE SECURE
发明人： Marc Merandat
CPC分类号： G11C16/14 , G11C16/22 , G11C16/3436 , G11C16/3445
摘要： The invention relates to a method of programming or erasing memory cells of a nonvolatile memory, including a first erase or program cycle comprising i) applying at least one erase or program pulse to first memory cells, ii) determining the state, erased or programmed, of the memory cells, and repeating steps i) and ii) if the memory cells are not in the desired state, and a second erase or program cycle including applying a predetermined number of erase or program pulses to second memory cells.
摘要翻译： 本发明涉及一种编程或擦除非易失性存储器的存储单元的方法，包括第一擦除或编程周期，包括：i）向第一存储器单元施加至少一个擦除或编程脉冲，ii）确定擦除或编程的状态， 以及重复步骤i）和ii）如果存储器单元不处于期望状态，以及第二擦除或编程周期，包括将预定数量的擦除或编程脉冲施加到第二存储单元。
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公开(公告)号：US09478294B2
公开(公告)日：2016-10-25
申请号：US14406334
申请日：2013-06-28
申请人： INSIDE SECURE
发明人： Marc Merandat
CPC分类号： G11C16/14 , G11C16/22 , G11C16/3436 , G11C16/3445
摘要： In a general aspect, a method of writing data in a nonvolatile memory can include performing a first erase or program cycle to write regular data in a first memory cell of the non-volatile memory by (i) applying at least one erase or program pulse to the first memory cell and (ii) determining the state, erased or programmed, of the first memory cell, and repeating (i) and (ii) if the first memory cell is not in the desired state. The method can also include applying a predetermined number of erase or program pulses to write fake data in a second memory cell.
摘要翻译： 在一般方面，在非易失性存储器中写入数据的方法可以包括通过以下步骤来执行第一擦除或编程周期以将正常数据写入非易失性存储器的第一存储单元：（i）施加至少一个擦除或编程脉冲 并且（ii）确定第一存储器单元的状态，擦除或编程的，并且如果第一存储器单元不处于期望状态，则重复（i）和（ii）。 该方法还可以包括施加预定数量的擦除或编程脉冲以将伪数据写入第二存储器单元。
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