Invention Grant
- Patent Title: Interposer substrate, semiconductor structure and fabricating process thereof
- Patent Title (中): 内插衬底，半导体结构及其制造方法
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Application No.: US14624331Application Date: 2015-02-17
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Publication No.: US09478500B2Publication Date: 2016-10-25
- Inventor: Chia-Ching Chen , Chin-Li Kao , Hung-Jen Chang , Tang-Yuan Chen , Wei-Hong Lai
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaosiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaosiung
- Agency: Foley & Lardner LLP
- Agent Cliff Z Liu; Angela D. Murch
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/538 ; H01L23/498 ; H01L21/683 ; H05K1/11
Abstract:
Described herein are interposer substrate designs for warpage control, semiconductor structures including said interposer substrates, and fabricating processes thereof. An interposer substrate defines a cavity and further includes a reinforcement structure, wherein the reinforcement structure is used to control warpage of the semiconductor package structure.
Public/Granted literature
- US20160240481A1 INTERPOSER SUBSTRATE, SEMICONDUCTOR STRUCTURE AND FABRICATING PROCESS THEREOF Public/Granted day:2016-08-18
Information query
IPC分类:
