Invention Grant
- Patent Title: Adaptive fin design for FinFETs
- Patent Title (中): FinFET的自适应散热片设计
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Application No.: US14220930Application Date: 2014-03-20
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Publication No.: US09478540B2Publication Date: 2016-10-25
- Inventor: Tsong-Hua Ou , Shu-Min Chen , Pin-Dai Sue , Li-Chun Tien , Ru-Gun Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L27/092 ; H01L27/118 ; G06F17/50

Abstract:
A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer.
Public/Granted literature
- US20140203378A1 Adaptive Fin Design for FinFETs Public/Granted day:2014-07-24
Information query
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