Invention Grant
US09478540B2 Adaptive fin design for FinFETs 有权
FinFET的自适应散热片设计

Adaptive fin design for FinFETs
Abstract:
A method of designing a standard cell includes determining a minimum fin pitch of semiconductor fins in the standard cell, wherein the semiconductor fins are portions of FinFETs; and determining a minimum metal pitch of metal lines in a bottom metal layer over the standard cell, wherein the minimum metal pitch is greater than the minimum fin pitch. The standard cell is placed in an integrated circuit and implemented on a semiconductor wafer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0