发明授权
- 专利标题： Method for manufacturing semiconductor device with tensile stress
- 专利标题（中）： 制造具有拉伸应力的半导体器件的方法
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申请号： US13369782申请日： 2012-02-09
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公开(公告)号： US09478654B2公开(公告)日： 2016-10-25
- 发明人: Fumitake Mieno , Meisheng Zhou
- 申请人： Fumitake Mieno , Meisheng Zhou
- 申请人地址： CN Beijing
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- 当前专利权人地址： CN Beijing
- 代理机构： Koppel, Patrick, Heybl & Philpott
- 优先权： CN201110398750 20111205
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78 ; H01L29/66 ; H01L29/10
摘要：
A semiconductor device, and a method for manufacturing the same, comprises a source/drain region formed using a solid phase epitaxy (SPE) process to provide partially isolated source/drain transistors. Amorphous semiconductor material at the source/drain region is crystallized and then shrunk through annealing, to apply tensile stress in the channel direction.