Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14535437Application Date: 2014-11-07
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Publication No.: US09484203B2Publication Date: 2016-11-01
- Inventor: Jun-Hee Lim , Ki-Jae Hur , Sung-Hwan Kim , Hae-In Jung , Soo-Jin Hong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2014-0018839 20140219
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/265 ; H01L21/324 ; H01L29/423 ; H01L29/78 ; H01L29/66
Abstract:
In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.
Public/Granted literature
- US20150235852A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2015-08-20
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