公开(公告)号：US09484203B2

公开(公告)日：2016-11-01

申请号：US14535437

申请日：2014-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Hee Lim ,  Ki-Jae Hur ,  Sung-Hwan Kim ,  Hae-In Jung ,  Soo-Jin Hong

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/265 ,  H01L21/324 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/26506 ,  H01L21/324 ,  H01L29/4236 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成栅极结构。 在由栅极结构暴露的衬底的上部进行离子注入工艺，使得形成离子注入区域以具有膨胀的体积。 离子注入工艺使用与衬底材料相同的离子。