Invention Grant
US09484214B2 Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
有权
使用变压器耦合等离子体时提高晶圆蚀刻不均匀性的系统和方法
- Patent Title: Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
- Patent Title (中): 使用变压器耦合等离子体时提高晶圆蚀刻不均匀性的系统和方法
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Application No.: US14293547Application Date: 2014-06-02
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Publication No.: US09484214B2Publication Date: 2016-11-01
- Inventor: Tom Kamp , Arthur Sato , Alex Paterson
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: G01P3/48
- IPC: G01P3/48 ; H01L21/3065 ; H01J37/32
Abstract:
A substrate processing system includes a processing chamber including a dielectric window and a pedestal for supporting a substrate during processing. A gas supply system supplies gas to the processing chamber. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A radio frequency (RF) source supplies RF signals to the coil to create RF plasma in the processing chamber. N flux attenuating portions are arranged in a spaced pattern adjacent the coil, wherein N is an integer greater than one.
Public/Granted literature
- US20150235808A1 SYSTEMS AND METHODS FOR IMPROVING WAFER ETCH NON-UNIFORMITY WHEN USING TRANSFORMER-COUPLED PLASMA Public/Granted day:2015-08-20
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