Invention Grant
- Patent Title: Metal-insulator-metal (MIM) capacitor
- Patent Title (中): 金属绝缘体金属（MIM）电容器
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Application No.: US14925205Application Date: 2015-10-28
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Publication No.: US09484398B2Publication Date: 2016-11-01
- Inventor: Petrus Hubertus Cornelis Magnee , Patrick Sebel
- Applicant: NXP B.V.
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Priority: EP12185518 20120921
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; H01L21/768 ; H01L21/311 ; H01L23/522 ; H01L21/31 ; H01L21/3213 ; H01L23/538 ; H01L27/06 ; H01L23/532
Abstract:
There is disclosed a metal-insulator-metal, MIM, capacitor. The MIM capacitor comprises a MIM stack formed within an interconnect metal layer. The interconnect metal layer is utilized as an electrical connection to a metal layer of the MIM stack.
Public/Granted literature
- US20160049461A1 METAL-INSULATOR-METAL (MIM) CAPACITOR Public/Granted day:2016-02-18
Information query
IPC分类:
