Invention Grant
- Patent Title: Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion
-
Application No.: US14662743Application Date: 2015-03-19
-
Publication No.: US09484402B2Publication Date: 2016-11-01
- Inventor: Ming Cai , Dechao Guo , Liyang Song , Chun-chen Yeh
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agent Yuanmin Cai, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L29/78 ; H01L29/51
Abstract:
A method is disclosed for forming a semiconductor device. A first opening is formed for an STI on a semiconductor substrate and a first process is performed to deposit first oxide into the first opening. A second opening is formed to remove a portion of the first oxide from the first opening and second process(es) is/are performed to deposit second oxide into the second opening and over a remaining portion of the first oxide. A portion of the semiconductor device is formed over a portion of a surface of the second oxide. A semiconductor device includes an STI including a first oxide formed in a lower portion of a trench of the STI and a second oxide formed in an upper portion of the trench and above the first oxide. The semiconductor device includes a portion of the semiconductor device formed over a portion of the second oxide.
Public/Granted literature
- US20150194334A1 Fabricating Shallow-Trench Isolation Semiconductor Devices To Reduce Or Eliminate Oxygen Diffusion Public/Granted day:2015-07-09
Information query
IPC分类:
